On April 2, 2025, STMicroelectronics (ST) and Innoscene announced the signing of an agreement for the development and manufacturing of gallium nitride (GaN) technology. This move marks the in-depth cooperation between the two companies in the field of third-generation semiconductors, and indicates that GaN technology will set off a new wave of development in the global power semiconductor market. China Exportsemi will deeply analyze the significance and potential impact of this cooperation from multiple perspectives such as technical strength, market layout, cooperation mode and industry influence.
Ⅰ Innoscience's technical strength: a leading position in the mass production of 8-inch wafers
As the world's leading manufacturer of 8-inch GaN-on-Si wafers, Innoscience is at the forefront of the industry in terms of technology development and mass production capabilities. The company took the lead in realizing the large-scale mass production of 8-inch (200mm) GaN-on-Si wafers, which are widely used in consumer electronics, data centers, automotive and industrial power systems. This achievement not only reflects Innoscience's leading position in GaN technology, but also reflects the high recognition of its products by the market.
As a third-generation semiconductor material, gallium nitride has characteristics such as high electron mobility, high breakdown electric field, and excellent thermal conductivity. GaN devices are able to operate at higher frequencies and temperatures while achieving lower power consumption and smaller footprints than traditional silicon materials. These advantages make it uniquely advantageous in high-power and high-frequency applications, especially in areas such as electric vehicles, data centers, and renewable energy systems.
Ⅱ ST's strategic layout: the consideration of choosing Innoscience
As the world's leading manufacturer of vertically integrated devices (IDMs), ST has a deep technology base and extensive market presence in the field of power semiconductors. Faced with the rapid development of GaN technology, ST chose to partner with Innoscience because of its strategic considerations in terms of technology integration and market expansion.
First, through the partnership with Innoscience, ST will be able to accelerate the deployment of GaN power technology and expand its existing silicon and SiC portfolios to increase its competitiveness in the power semiconductor market.
Secondly, the complementary capacity model mentioned in the cooperation agreement enables both parties to leverage each other's manufacturing facilities, optimize the supply chain layout, and improve production flexibility and efficiency.
In addition, Innoscience's manufacturing capacity and cost advantages in the Chinese market are also important factors for ST. By working together, ST will be able to enter the Chinese market more effectively and leverage its global sales network to help Innoscience expand into international markets, achieving a win-win situation.
Figure: 1 billion 8-inch wafers are mass-produced! Why did China's Innoscience let ST bet on three and a half generations?
Ⅲ Market prospect of gallium nitride technology: a wide range of applications in many fields
GaN technology has shown promising applications in a number of fields, especially in consumer electronics, data centers, automotive and industrial power systems.
In the field of consumer electronics, GaN technology has been widely used in fast charging devices. Compared with traditional silicon-based chargers, GaN fast charging devices are smaller and more efficient, which can significantly improve the user experience. For example, companies such as Apple and Xiaomi have launched fast charging products based on GaN technology, and the market response has been positive.
In the data center sector, GaN technology can improve the energy efficiency and power density of server power supplies and reduce operating costs. With the rapid expansion of data centers around the world, the demand for efficient power management solutions continues to grow, and the application prospects of GaN devices are promising.
In the automotive sector, the use of GaN technology is expanding from on-board chargers to core components such as motor drives and inverters. Its high-power density and high efficiency make it ideal for electric vehicle powertrains. With the rapid development of the global electric vehicle market, the demand for GaN devices is expected to continue to grow.
Ⅳ The impact of cooperation on the industry pattern: accelerate the popularization of technology and ecological reshaping
The collaboration between STMicroelectronics and Innoscience will not only help both companies grow, but will also have a profound impact on the competitive landscape of the global power semiconductor industry.
First, this collaboration model will accelerate the adoption of GaN technology and drive technological progress in the industry as a whole. As more companies enter the field of gallium nitride, market competition will become more intense, and the pace of technological innovation will further accelerate.
Secondly, the complementary production capacity model of cooperation provides a new supply chain layout idea for the industry. Against the backdrop of increasing uncertainty in the global supply chain, this flexible supply chain model will help companies stay competitive in a complex market environment.
In addition, the ST and Innoscience collaboration will reshape the ecosystem of third-generation semiconductors. By integrating the technology and market resources of both parties, we will promote the application of GaN technology in more fields and accelerate the overall development of the industry.
Ⅴ Challenges and opportunities: cost, reliability and market education
Despite the significant advantages and broad market prospects of GaN technology, its development still faces some challenges.
The first is the issue of cost. Although the cost of GaN devices has been reduced through mass production and process improvements, it is still higher than traditional silicon devices. This limits its application in price-sensitive areas to a certain extent.
The second is the issue of reliability and stability. The long-term reliability of GaN devices in high temperature and high humidity environments still needs to be further optimized to meet the stringent requirements of automotive and industrial applications. While significant progress has been made in recent years in terms of the durability of GaN devices, the market remains cautious about its long-term stability and quality control.
In addition, market education remains an important challenge. Although GaN technology is superior to silicon-based devices in terms of technical parameters, some enterprises and end users are still not familiar with its characteristics and application scenarios. The promotion and popularization of GaN technology requires the joint efforts of all parties in the industry chain to strengthen marketing and technical training to accelerate the improvement of user acceptance.
Behind these challenges, however, lies great opportunities. With the continuous optimization of the GaN manufacturing process, the cost reduction will further drive the market penetration. The collaboration between Innoscience and STMicroelectronics will advance the GaN industry at both the technical and market levels, enabling it to enter the mainstream market faster.
Ⅵ Summary: Open a new chapter in gallium nitride technology
The collaboration between STMicroelectronics and Innoscience marks a new phase in the development of GaN technology. This collaboration will not only drive GaN adoption in the global market, but also strengthen ST and Innoscience's market position in the power semiconductor industry.
In the long run, the maturity and large-scale application of GaN technology will accelerate the development of the global electronics industry in the direction of high efficiency and low energy consumption. Especially in key fields such as electric vehicles, data centers, and consumer electronics, gallium nitride is expected to become one of the core technologies of power semiconductors in the future.
For the entire industry, this cooperation is a signal that gallium nitride has moved from the laboratory to large-scale commercial use, and all companies in the industry chain need to accelerate their deployment to meet the upcoming wave of technological change. In the future, as more companies join the GaN ecosystem, the competitive landscape of the global power semiconductor market will usher in new changes.
