In 2025, China's storage field has made remarkable progress and started a new journey of industrial development. These breakthroughs have not only injected new impetus into the development of China's semiconductor industry, but also attracted widespread attention in the global storage market.
YMTC's technological breakthrough
YMTC has made a number of important technological breakthroughs, especially in the field of high-end NAND memory chips. The TiPro9000 SSD is equipped with Xtacking 4.0 technology and a 3D TLC NAND chip with 2yy layer and 1Tbit capacity. This technology not only improves storage density and read and write speed, but also marks that Chinese companies have stronger competitiveness in the high-end NAND memory chip market. In the past, international companies such as Samsung and Micron have long occupied a dominant position in the market, but this breakthrough of YMTC has broken some of the technology monopolies and made the competition pattern of the global NAND market more diversified.
The progress of CXMT
CXMT has also made important progress in the field of high-end memory particles. The application of its new G4 DDR5 DRAM in Gloway memory shows its technological progress. Although there is still a gap compared with the three giants such as Samsung, SK hynix, and Micron, this progress has provided impetus for the development of the domestic DRAM industry. The technological breakthrough of CXMT will help drive the coordinated development of domestic upstream and downstream enterprises, gradually realize the transformation from dependence on imports to independent supply, and reduce the dependence of the domestic electronics industry on foreign memory products.
Tongfu Microelectronics' HBM2 memory trial production
The trial production of HBM2 memory by Tongfu Microelectronics is of great strategic significance. As the world's third largest semiconductor packaging and testing company, Tongfu Microelectronics' action shows that China has made key progress in high-end memory manufacturing technology. HBM2 memory is very important for the field of high-performance computing and artificial intelligence, and the successful trial production of Tongfu Microelectronics is expected to provide stable high-end memory support for domestic related industries and promote the development of cutting-edge technology fields such as artificial intelligence and big data processing in China.
Fig:Breakthrough and New Journey of China's Storage Industry
Impact on China's storage industry
The impact of these breakthroughs on China's storage industry is multifaceted. In the upstream of the industrial chain, more R&D investment will be promoted to promote the localization process of core technologies such as raw materials and equipment. In the midstream manufacturing link, the company's technological upgrading will improve product quality and production capacity, and enhance the market competitiveness of domestic storage products. In downstream application fields, such as smart phones, computers, servers and other industries, the rise of domestic storage products will provide more cost-effective options and promote the development of the entire industry.
Changes in the international competitive landscape
In international competition, China's breakthrough in the field of storage has changed the competitive situation in the global market. On the one hand, Chinese enterprises have gained more share in the international market by virtue of their technological strength and cost advantages, which has challenged traditional international giants. On the other hand, it also prompts global storage companies to accelerate the pace of technological innovation and promote the overall progress of the industry.
Future outlook
Looking ahead, as China continues to increase R&D investment in the storage field and continuously improve its industrial ecology, it is expected to occupy a more important position in the global storage market. According to market analysis, China's data storage market is valued at $15,940.3 million in 2025 and is expected to reach $65,782.5 million by 2035, with a compound annual growth rate of 14.9%. This growth will provide solid storage technology support for the development of China's and even the world's digital economy.
