Samsung Electronics has successfully increased the number of stacked layers of next-generation 3D DRAM from the previous level to 16 layers, which is twice the number of competitors such as Micron. 3D DRAM is a next-generation memory known as the Vertically Stacked Cell Array Transistor (VS-CAT). The design principle is similar to the vertical stacking of paper, which can significantly improve the integration of DRAM cells, allowing 3D DRAM to fit more cells than existing DRAM structures, while reducing current interference.
Traditional DRAM memory has a planar structure, and its capacity and performance are limited by its physical size. Samsung's 3D DRAM technology, on the other hand, stacks multiple memory cells on top of each other vertically, enabling higher integration and larger storage capacity. This time, Samsung has increased the number of stacking layers to 16 layers, further improving the performance and density of memory.
Compared with traditional DRAM, 3D DRAM has higher integration and lower power consumption. By vertically stacking, Samsung has succeeded in integrating more memory cells into a smaller chip area, thereby increasing storage density. At the same time, the power consumption of 3D DRAM is also reduced due to the reduction of current interference, providing a longer battery life for the device.
Figure: Samsung's 3D DRAM has made a technological breakthrough
Samsung's 3D DRAM technology uses hybrid bonding technology in the form of wafer-to-wafer (W2W). In this technology, peripherals (logic) and memory cells are attached to different wafers, and then they are connected together by hybrid bonding technology. This design not only improves the performance and reliability of the memory, but also reduces the manufacturing cost.
In addition, Samsung is also exploring Power Backed (BSPDN) technology. This technology places power and signal lines on the back of the chip, helping to solve problems such as interconnect bottlenecks. With back-powered technology, Samsung can further improve the performance and stability of the memory to meet the higher storage needs of the future.
With the deepening of the digital era, the demand for data storage will continue to grow. Samsung has successfully strengthened its leading position in the global storage market by continuously improving the performance and density of its storage technology. The number of stacked layers of 3D DRAM has been increased to 16, further widening the technology gap with competitors.
Looking ahead, Samsung will continue to increase its investment and R&D efforts in the field of memory technology. Through continuous innovation and breakthroughs, Samsung will drive the progress and development of the storage industry to provide more powerful and efficient storage solutions for the digital age. At the same time, Samsung will also actively explore new application scenarios and market opportunities to provide better products and services for consumers around the world.
