STMicroelectronics recently unveiled its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, tailored for the next generation of electric vehicle (EV) traction inverters. This new technology sets new benchmarks in terms of energy efficiency, power density and robustness, while meeting the needs of the automotive and industrial markets, especially optimized for traction inverters.
The fourth-generation SiC MOSFET technology has a significantly lower on-resistance (RDS(on)) than the previous generation, which minimizes conduction losses and improves the overall efficiency of the system. In addition, this SiC MOSFET sets new standards in terms of power, power density, and robustness. They also offer faster switching speeds, which are critical for high-frequency applications, and enable more compact and efficient power converters.
STMicroelectronics plans to further advance SiC MOSFET technology by introducing more advanced SiC technology innovations in 2027. The Company is developing a fifth-generation SiC power device that will feature an innovative high power density technology based on planar structures, while simultaneously developing a breakthrough innovation that promises excellent RDS(on) values at high temperatures, further reducing RDS(on) compared to existing SiC technologies.
As a global leader in SiC power MOSFETs, ST continues to innovate to take advantage of SiC's superior efficiency and enhanced power density over silicon. The current generation of SiC devices is designed to enhance future EV traction inverter platforms, including size and efficiency improvements. Despite the expanding EV market, there are still barriers to achieving mainstream adoption, prompting manufacturers to focus on producing more economical EVs.
Figure: STMicroelectronics unveils custom SiC power MOSFETs (Source: PSW)
The 800V EV bus drive system with silicon carbide facilitates fast charging and reduces vehicle weight, enabling manufacturers to create upgraded EVs with longer ranges. Available in both 750V and 1200V grades, ST's latest SiC MOSFET devices will improve the efficiency and performance of 400V and 800V EV bus traction inverters, extending the benefits of SiC to midsize and compact EVs, a key area for mass-market adoption. The latest generation of SiC technology is suitable for many high-power industrial applications, such as solar inverters, energy storage systems, and data centers, and can significantly improve energy efficiency for these expanding uses.
STMicroelectronics' fourth-generation SiC MOSFET technology is suitable not only for EV traction inverters, but also for a variety of applications using high-power industrial motor drives, including solar inverters, energy storage solutions, and data centers, significantly improving the energy efficiency of these applications.
In addition, STMicroelectronics has supplied more than five million STPOWER SiC devices in the automotive sector, including traction inverters, on-board chargers (OBCs), DC-DC converters, EV charging stations, and electronic compressors for a variety of EV applications, significantly improving the performance, efficiency, and range of new energy vehicles.
As the EV market continues to grow, STMicroelectronics' next-generation SiC technology is expected to help automakers produce more cost-effective and efficient EVs, driving widespread adoption of EVs.
It is reported that ST has completed the certification of its fourth-generation SiC technology platform at the 750V level and expects to complete the certification of the 1200V class in the first quarter of 2025. Devices with nominal voltages of 750V and 1200V will soon be commercially available, enabling designers to address the needs of a wide range of applications, from traditional AC line voltages to high-voltage EV batteries and chargers. The fifth generation of ST SiC power devices will feature a new high-power-density technology with a planar structure. ST is also advancing a breakthrough technology that guarantees excellent RDS(on) values at high temperatures and further reduced RDS(on) values compared to current SiC technologies.
